Prof. Yuri F. Komnik

Yu.F.Komnik was born on January 29, 1931, in Berdyansk, Zaporozh'e region, Ukraine, was died June, 2 2018 in Kharkov.

Physicist, experimental physics.

Yu.F.Komnik graduated from Kharkov Polytechnical Institute in 1956, speciality – Physics of Metals.

Doctor of Physics and Mathematics (1975); Professor (1981); Laureate of the Ukrainian Soviet Socialist Republic State Prize at science and technique (1986).

After graduation, Yu.F.Komnik was a PhD-student and a teacher in Kharkov Polytechnical Institute. Beginning from 1964, he works in B.I.Verkin Institute for Low Temperature Physics and Engineering, having been a Head of the department of the kinetic properties of metals from 1965 till 2002. At present, he is a Chief Researcher.

The main direction of investigations is connected with the study of specific physical properties of the thin layers of metals, electron kinetic phenomena in the thin films, disordered metallic systems and low-dimensional conductors.

Has published more than 180 scientific articles, several reviews, is the author of the monograph "Physics of Metal Films", Atomizdat, Moscow, 264 pages, 1979 (in Russian).

Main scientific results and publications

1. Kinetics of the thin films formations and phase transitions in small particles (The Ukrainian Soviet Socialist Republic State Prize in science and technique, 1986):
- discovery of changing from vapor-to-crystal condensation mechanism to vapor-to-liquid condensation mechanism at the temperatures essentially lower than substance melting temperature;
- introduction of conception about the characteristic temperatures and thin films diagrams of condensation;
- discovery of the size dependence of the melting temperature and crystal lattice period of small particles.
(was published in monograph "Physics of metal films. Size and Structure Effects", Atomizdat, Moscow, 264 pages, 1979 (in Russian)).

2. The quantum size-effect in thin films:
- quantum-size oscillations of the conductivity in antimony (Pis'ma ZhETF, 6, 536 (1967)) and bismuth films (ZhETF, 54, 63 (1978);
- quantum-size oscillations of the critical superconductor transition temperature in the tin films (Pis'ma ZhETF, 8, 9 (1976); ZhETF, 57, 1495 (1968));
- quantum oscillations of the conductivity in the bismuth-antimony films with varying compositions (Sov. J. Low Temp. Phys., 1, 204 (1975); Sov. J. Low Temp. Phys., 4, 1042 (1978));
- discovery of the influence of surface potential bending on the spectrum of the semimetal thin films (ZhETF, 60, 669, (1971); Thin Solid Films, 36, 204 (1976)).

3. Correlation of the amorphic films electron properties with their coordination structures (low temperature condensates of the bismuth and gallium):
- low temperature electronography and determination of the radial distribution function (Crystallography, 18, 1263 (1973));
- connection of the conductivity with the coordination structure change (ZhETF, 63, 2226 (1972));
- connection of the superconducting properties with dispersion curves of the quasiphonon excitations change (ZhETF, 65, 2455 (1973)).

4. Quantum interference effects in thin films (weak localization and electron-electron interaction):
- evidence of the weak localization (antilocalization) in bismuth films (Sov. J. Low Temp.Phys., 7, 656 (1981); J. Low Temp. Phys., 52, 315 (1983)) and antimony films (Sov. J. Low Temp.Phys., 9, 93 (1983));
- the method of the separation of weak localization from electron interaction (Solid State Communs., 44, 865 (1982));
- evidence of the electron-electron interaction decreasing in "dirty" limit (Phys. Rev. B, 50, 15298 (1994); Phys. Rev. B, 58, 8079 (1998));
- the behavior of the quantum corrections in strong electric field (Phys. Rev. B, 50, 16845 (1994); Low Temp. Phys., 20, N11, 902; N12, 983 (1994)).

5. The electron transport in the granulated films and percolation systems.
- effect of the superconductivity near metal-insulator transition (J. Low Temp. Phys., 69, 401 (1987)) and recurrent superconductivity (J. Low Temp. Phys., 75, 331 (1989));
- the transition from strong to weak localization under the influence of the electric field (Low Temp. Phys., 23, 965 (1997));
- detection of the gigantic negative magnetoresistance in the hopping conductivity regime (Physica B, 254, 260 (1998)).

6. The electron focusing by a transverse magnetic field:
- determination of the inter-valley dissipation of the electrons on the bismuth surface (Sov. J. Low Temp.Phys., 11, 603 (1985));
- "cyclotron" spectroscopy of the electron-phonon relaxation in a microcontact (Pis'ma ZhETF, 47, 103 (1988));
- the contribution of the surface layer to the conductivity in condition of skinning (Low Temp. Phys., 19, 794 (1993); Surface Science, 331, 1181 (1995));
- diffraction of the electron flow through a microcontact (Low Temp. Phys., 22, 1406 (1996); Phys. Rev. B, 56, 4023 (1997)).

7. Electron transport in the two-dimensional electron systems:
- a possible alternative explanation of the “High-temperature” oscillations of the magnetoresistance of bismuth (Low Temp. Phys., 29, 934 (2003));
- spin-orbit interaction in thin bismuth films in perpendicular (Low Temp. Phys., 31, 326 (2005)) and parallel magnetic fields (Low Temp. Phys., 33, 79 (2005));
- Shubnikov-de Haas oscillations of the conductivity of a two-dimensional gas in quantum wells based on germanium and silicon. Determination of the effective mass and g factor (Low Temp. Phys., 35, 141 (2009));
- overheating effect and hole-phonon interaction in SiGe heterostructures (Low Temp.Phys., 34, 943 (2008));
- observation of the interaction effects in two-dimension hole gas in SiGe heterostructures in ballistic regime (Low Temp. Phys., 32, 683 (2006));
- the weak localization and charge carriers interaction effects in in two-dimension hole gas in Ge and SiGe heterostructures (J. Low Temp. Phys., 32, 683 (2006));
- quantum effects and relaxation characteristics of the charge carriers in SiGe-based heterostructures (J. Low Temp. Phys, 159, 230 (2010));
- positive quasiclassical magnetoresistance in two-dimension hole gas in germanium quantum channel (Low Temp. Phys., 36, 1076 (2010));
- on the magnetoresistance maximum observed in the intermediate magnetic field region for the two-dimensional hole gas in a strained Si 0.05Ge 0.95 quantum well (JLTP, v. 168, № 5-6, 285-291 (2012));
- magnetotransport studies of SiGe-based p-type heterostructures: problems of the effective mass determination ( Low Temp. Phys., 38, № 12, 1455-1463 (2012)).